Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

作者：Fu, Dong; Liu, Jietao; Song, Jiakun; Yu, Hailong; Zhang, Zuyin; Wang, Wenbo; Xu, Yun; Song, Guofeng; Wei, Xin^*

来源：Journal of Applied Physics, 2016, 119(10): 103103.

DOI：10.1063/1.4943166

• HIGH-INDEX NANOSTRUCTURES
• PLASMONIC SOLAR-CELLS
• BROAD-BAND
• GRAPHENE PHOTODETECTORS
• ABSORPTION
• DESIGN
• NANOPARTICLES
• TEMPERATURE
• RESONANCES
• PHOTODIODE

High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In0.53Ga0.47As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency is as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nanocylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.

• 出版日期2016-3-14
• 单位西安电子科技大学; 中国科学院