Anisotropic interface induced formation of Sb nanowires on GaSb(111) A substrates

作者：Proessdorf A^*; Grosse F; Perumal K; Braun W; Riechert H

来源：Nanotechnology, 2012, 23(23): 235301.

DOI：10.1088/0957-4484/23/23/235301

The growth of Sb nanowires on GaSb(111) A substrates is studied by in situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the <(2) over bar 10 > and the GaSb crystal along <(1) over bar 10 > directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.

• 出版日期2012-6-15