Application of reactor neutrons to the investigation of the radiation resistance of semiconductor materials of Group III-V and sensors

作者：Bolshakova I A^*; Kulikov S A; Konopleva R F; Chekanov V A; Vasilevskii I S; Shurygin F M; Makido E Yu; Duran I; Moroz A P; Shtabalyuk A P

来源：Physics of the Solid State, 2014, 56(1): 157-160.

DOI：10.1134/S1063783414010089

The investigation of the radiation resistance of Group III-V semiconductor materials is an important and urgent problem. Magnetic sensors based on radiation resistant semiconductor materials are widely used in magnetomeasuring systems of thermonuclear industrial and experimental reactors. The basic approaches to the study of semiconductor materials under conditions of neutron irradiation and the results of some experiments on testing indium-containing semiconductor materials InSb, InAs, and their alloys InAs (x) Sb1 - x are presented. The presented experience of the development of equipment for on-line testing of materials and magnetic diagnostic sensors under radiation conditions can be used for testing a wide range of materials under conditions close to those of the ITER and other thermonuclear reactors.

• 出版日期2014-1