科研之友
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摘要
Simultaneous lasing from quantum dot laser diodes at the ground and the excited states has been systematically studied. Double-state lasing was stable at high currents in the absence of heating effects, and the lasing linewidths at both the ground and the excited states increased as the injection current increased. This result favors slow carrier relaxation to the ground state as the mechanism for double-state lasing.
- 出版日期2011-2
