Memristive Behavior in Thin Anodic Titania

作者：Miller Kyle^*; Nalwa Kanwar S; Bergerud Amy; Neihart Nathan M; Chaudhary Sumit

来源：IEEE Electron Device Letters, 2010, 31(7): 737-739.

DOI：10.1109/LED.2010.2049092

• Electrochemical anodization
• memristor
• titanium dioxide

A common material in creating memristors is titanium dioxide (TiO(2)), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO(2) films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO(2) interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.

• 出版日期2010-7