A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

作者：Pan Andrew^*; Chui Chi On

来源：IEEE Electron Device Letters, 2012, 33(10): 1468-1470.

DOI：10.1109/LED.2012.2208933

• Double gate (DG)
• tunnel field-effect transistor (TFET)
• tunneling

Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gate TFET and demonstrate its agreement with simulation. This model will be useful in the design and circuit analysis of TFETs.

• 出版日期2012-10