Annealing effect on properties of ZnO thin films grown on LiNbO3 substrates by MOCVD

作者：Wang YZ; Wang HL; Li SZ; Zhou SM; Hang Y; Xu J^*; Ye JD; Gu SL; Zhang R

来源：Journal of Crystal Growth, 2005, 284(3-4): 319-323.

DOI：10.1016/j.jcrysgro.2005.07.031

• annealing
• LiNbO3
• PL
• XRD
• MOCVD
• ZnO thin films

ZnO films were grown on (0 0 0 1) LiNbO3 substrates by metal organic chemical vapor deposition (MOCVD). Annealing of ZnO films was performed in air for I h at 800 degrees C. The effects of annealing on the structural and optical properties of ZnO thin films on LiNbO3 substrates were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD patterns and AFM showed that the as-grown and the annealed ZnO films grown on LiNbO3 substrates had c-axis preferential orientation, the crystallinity of the ZnO films grown on LiNbO3 Substrates was improved, and the grain size increased by annealing. The PL spectra showed that the intensity of the UV near-band-edge peak was increased after annealing, while the intensity of visible peak (deep-level emission) decreased.

• 出版日期2005-11-1
• 单位中国科学院上海光学精密机械研究所; 南京大学