摘要

A series of hexagonal close-packed (HCP) Co-W thin films were deposited by sputtering on surface oxidized silicon substrates at 300 degrees C. A linear dependency of saturation magnetization (M(s)) on W content was found up to about 9 at. pct W, and then it underwent an increased M(s) vs. W content curve as compared to the initial linear dependency. The thermal magnetization technique was used to confirm that the increased M(s) behaviour is correlated to the phase separation of the Co-W thin films. The phase separation behaviour was also found to be dependent on W content and the reason was discussed in detail. Finally an interesting composition range was suggested to be about 13 at. pct-17 at. pct W for the Co-W thin films, in which they exhibit much higher magnetic anisotropy energy than Co-Cr thin films and improved phase separation.