摘要

In this paper, double zero-pole cancellation for BandWidth (BW) extension of Transimpedance Amplifiers has been introduced. The effect of parasitic capacitances of the MOS transistor has been reduced using the mentioned approach. The process of zero-pole cancellation to extend the BW of the amplifier has been explained. To demonstrate the feasibility of the technique the transimpedance amplifier has been simulated in a well-known CMOS technology (i.e., 90nm STMicroelectronics). It achieves 3 dB bandwidths of more than 46 GHz in the presence of 50 fF photodiode capacitance and 5 fF loading capacitance while only dissipating 4.06mW.

  • 出版日期2012-5

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