Development of SOI pixel process technology

作者：Arai Y^*; Miyoshi T; Unno Y; Tsuboyama T; Terada S; Ikegami Y; Ichimiya R; Kohriki T; Tauchi K; Ikemoto Y; Fujita Y; Uchida T; Hara K; Miyake H; Kochiyama M; Sega T; Hanagaki K; Hirose M; Uchida J; Onuki Y; Horii Y; Yamamoto H; Tsuru T; Matsumoto H; Ryu S G; Takashima R; Takeda A; Ikeda H; Kobayashi D; Wada T; Nagata H; Hatsui T; Kudo T; Taketani A; Kameshima T; Hirono T; Yabashi M; Furukawa Y; Battaglia M; Denes P

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2011, 636(1): S31-S36.

DOI：10.1016/j.nima.2010.04.081

• SOI
• Pixel
• X-ray imaging
• Particle tracking

A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 mu M CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors.
For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.

• 出版日期2011-4-21