A Model for Understanding Electromigration-Induced Void Evolution in Dual-Inlaid Cu Interconnect Structures

作者：Pete D J^*; Helonde J B; Vairagar A V; Mhaisalkar S G

来源：Journal of Electronic Materials, 2012, 41(3): 568-572.

DOI：10.1007/s11664-011-1855-y

• Electromigration
• dual-inlaid Cu
• Cu interconnects
• void migration
• interconnect reliability

Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-electron microscopy (SEM) investigations as well as in various other reported studies. The electromigration mechanism in Cu interconnect structures and differences in the peculiar electromigration-induced void evolution in various dual-inlaid Cu interconnect structures can be clearly understood based on this model. These findings warrant reinvestigation of technologically important electromigration mechanisms by developing rigorous models based on similar concepts.

• 出版日期2012-3
• 单位南阳理工学院