Microstructural and electrical properties of Ga(2)O(3) nanowires grown at various temperatures by vapor-liquid-solid technique

作者：Cuong Nguyen Duy; Park Yeon Woong; Yoon Soon Gil^*

来源：Sensors and Actuators B: Chemical , 2009, 140(1): 240-244.

DOI：10.1016/j.snb.2009.04.020

• Gallium oxide
• Nanowires
• Gas sensor

Gallium oxide (Ga(2)O(3)) nanowires were grown at various temperatures by vapor-liquid-solid method on Au-nanodots prepared at 500 degrees C on SiO(2)/Si substrates. The average size of Au-nanodots was approximately 20 nm. The optimum conditions for the growth of nanowires were in the temperature range of 700-900 degrees C. The diameter and the length of nanowires grown from 700 to 900 degrees C are 10-40 min and several micrometers, respectively. The samples grown at 950 degrees C exhibit the various shapes of nanobelts and nanosheets including nanowires. On the other hand, Ga(2)O(3) nanowires were not formed at 1000 degrees C. The nanowires grown at 900 degrees C were beta-Ga(2)O(3) with a crystal structure of single crystal. For applications of H(2) gas sensor, the response values of Ga(2)O(3) nanowires grown at 900 degrees C are quite high and the response time is in the range of 48-52 s. However, gas sensing properties should be more analyzed.

• 出版日期2009-6-18