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摘要
(F)or the investigation of the interface stability of SrTiO3/Sr/Si (100) system during high temperature annealing process, we have grown 1-2 atom layer SrTiO3 ultra-thin film on Sr/Si (100) -2 x 1 substrate using pulsed laser deposition technique. After annealing, we found that nano-scale islands appear in the surface. These nano-islands show metallic property by scanning tunneling microscopy, and the STM image shows bias voltage dependence of these nano-islands. Oxygen in the oxide reacts with silicon and forms volatile silicon monoxide during vacuum annealing, while Ti atoms in the oxide react with silicon, forming C-54 TiSi2 islands.
- 出版日期2011-3
- 单位常州工学院
