Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography

作者：Tommila J^*; Polojarvi V; Aho A; Tukiainen A; Viheriala J; Salmi J; Schramm A; Kontio J M; Turtiainen A; Niemi T; Guina M

来源：Solar Energy Materials and Solar Cells, 2010, 94(10): 1845-1848.

DOI：10.1016/j.solmat.2010.05.053

• Nanoimprint lithography
• Multijunction photovoltaic cell
• Antireflection coating
• Moth-eye

We report the fabrication of moth-eye antireflection nanostructures on AlInP compound commonly used as a window layer in high-efficiency multijunction solar cells. The broadband antireflective nanostructures were fabricated by nanoimprint lithography directly on molecular beam epitaxy grown AlInP/GaAs surface. At normal incidence, the structures exhibited an average reflectivity of 2.7% measured in a spectral range 450-1650 nm. Photoluminescence measurements of the emission from GaAs substrate suggest that the optical losses associated with the moth-eye pattern are low. Nanoimprint lithography offers a cost-effective approach to fabricate broadband antireflection coatings required in III-V high-efficiency multijunction solar cells.

• 出版日期2010-10