Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers

作者：Liao Wen Chia^*; Chen Cheng Hsin; Hsu Chia Wei; Hsin Yue Ming; Chyi Jen Inn

来源：Journal of the Electrochemical Society, 2015, 162(8): H522-H526.

DOI：10.1149/2.0471508jes

This study applied amethodology for defining the threshold voltage shift (Delta V-TH) transient ofAlGaN/GaN heterostructure field-effect transistors (HFETs) to observe the influence of traps in AlGaN/GaN HFETs with different buffer layers: a carbon-doped (C-doped) buffer and an Al0.05Ga0.95N back barrier layer. This methodology involves synchronous switching of gate-to-source voltage (V-GS) and drain-to-source voltage (V-DS). Two HFETs demonstrated similar transient behaviors but different trends by enduring various V-DS stress level. For devices with a C-doped buffer layer, the amount of threshold voltage shift becomes saturated with increasing V-DS stress; however, a device with an Al0.05Ga0.95N back barrier layer does not. A simulation tool was used to analyze the trap behaviors and close agreement was seen between measured and simulated.

• 出版日期2015
• 单位中央民族大学