A novel nanoscale SOI MOSFET with Si embedded layer as an effective heat sink

作者：Anvarifard Mohammad K; Orouji Ali A^*

来源：International Journal of Electronics, 2015, 102(8): 1394-1406.

DOI：10.1080/00207217.2014.982213

• heat sink
• self-heating effect
• SOI MOSFET
• thermal conductivity
• embedded layer

A novel structure such as nanoscale silicon-on-insulator (SOI) MOSFET with silicon embedded layer (SEL-SOI) is proposed to reduce self-heating effects (SHEs) successfully. The SEL as a useful heat sink with high thermal conductivity is inserted inside the buried oxide. The SEL acts like a heat sink and is therefore easily able to distribute the lattice heat throughout the device. We noticed excellent improvement in the thermal performance of the device using two-dimensional and two-carrier device simulation. Our simulation results show that SHE has been dramatically reduced in the proposed structure. In regard to the simulated results, the SEL-SOI structure has shown good performance in comparison with the conventional SOI (C-SOI) structure when utilised in the high temperature applications.

• 出版日期2015-8-3