A 0.9-V, 7-mW UWB LNA for 3.1-10.6-GHz wireless applications in 0.18-mu m CMOS technology

作者：Slimane Abdelhalim^*; Trabelsi M; Belaroussi M T

来源：Microelectronics Journal, 2011, 42(11): 1263-1268.

DOI：10.1016/j.mejo2011.08.008

• UWB
• LNA
• Low voltage
• Low power
• Wideband input matching
• Current reuse technique

This paper presents a low-voltage and low-power CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications. A cascade stage topology based on common source amplifier has been proposed to reduce the supply voltage of the proposed LNA. In addition, a high-pass filtering network is chosen instead of a Chebyshev band pass structure to simultaneously perform the wideband input matching and to improve the noise figure over the desired band. Using a 0.18 mu m CMOS process, the proposed LNA exhibit a state of the art performance consuming only 7 mW from a 0.9 V supply voltage. Post-layout simulation results show a power gain S(21) of 13.5 dB with gain ripple of +/- 1.5 dB, in the frequency range of 3.1-10.6 GHz. The noise figure is below 4.6 dB with a minimum of 2.7 dB at 4.5 GHz. The input and output return losses S(11) and S(22) are better than -9 dB and -15 dB, respectively. The highest value of IP3 is -8 dBm obtained at 5 GHz. The active silicon area occupied by the UWB-LNA is only 0.59 mm(2).