摘要
A promising route based on in situ radio frequency sputtering a quaternary CIGS target without post-selenization treatment can be achieved. The deposited CIGS films shows clear CIGS chalcopyrite structure, highly (1 1 2) oriented and dense polycrystalline grains. The proposed Cu precursor film, an induced layer, can be better for CIGS formation with controllable composition. Devices built with these films exhibit efficiencies of 1.25%. Higher efficient can be expected for CIGS solar cells by further improving this low-cost, simple and large-scale technique.
- 出版日期2014-10-15
- 单位深圳大学