摘要
We report a new type of black silicon flexible black silicon A silicon on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer Large-area uniform micro spikes on the surface of a very thin flexible silicon layer are obtained The black silicon shows good flexibility and optical properties The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light which makes It a potential good candidate as an absorber for the solar-thermo generator Published by Elsevier B V
- 出版日期2011-2-15
- 单位重庆大学