A CMOS silicon spin qubit

作者：Maurand, R.^*; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Lavieville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; De Franceschi, S.^*

来源：Nature Communications, 2016, 7(1): 13575.

DOI：10.1038/ncomms13575

• QUANTUM-DOT
• HOLE SPIN
• NANOWIRE
• BLOCKADE
• GATE

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

• 出版日期2016-11-24
• 单位中国地震局