Preparation and characterization of flash-evaporated CuInSe2/CuGaSe2 thin films

作者：Yandjah L^*; Bouasla A; Ayed H; Bechiri L; Benabdeslem M; Benslim N; Mandjoubi L; Portier X; Ihlal A

来源：Optical Materials, 2010, 32(7): 772-775.

DOI：10.1016/j.optmat.2010.02.013

Deposition of CuInSe2 thin film on CuGaSe2 thin film (CuInSe2/CuGaSe2) has been prepared by flash evaporation technique on Corning glass substrates heated at T-s = 250 degrees C and annealed at 450 degrees C in an argon atmosphere. The properties of the resulting films have been examined by scanning electron microscopy (SEM) and X-ray diffraction. The optical measurements have been carried out in the wavelength range 500-3000 nm. X-ray diffraction revealed that the film was single-phase with chalcopyrite structure and has a preferred orientation along the (1 1 2) plane. The determined lattice parameters were a = 5.75 angstrom and c = 11.56 angstrom. SEM micrographs revealed grain sizes ranging from 0.03 mu m to 0.04 mu m. The thickness of the thin films is around 0.8 mu m. The absorption coefficient Of this film was above 2.25 x 10(4) cm(-1) and the band gap was found to be 1.14 eV. The annealing in Ar did not influence the composition of the layers considerably but improved the crystalline structure quality.

• 出版日期2010-5-3