Ultraviolet Electroluminescence From ZnO-Based n-i-p Light-Emitting Diodes

作者：Lee Ching Ting^*; Yan Jheng Tai

来源：IEEE Photonics Technology Letters, 2011, 23(6): 353-355.

DOI：10.1109/LPT.2011.2104945

• Li-N dual acceptor
• p-type ZnO film
• vapor cooling condensation system
• ZnO-based light-emitting diodes

The p-type ZnO films were obtained using codeposition of ZnO and LiNO3 sources by the vapor cooling condensation system. With an adequate postannealing temperature, the p-type conductive behaviors of the resulting ZnO films could be achieved due to the activation of Li-N dual acceptor. According to the emission energy of free electron to acceptor hole level, the acceptor binding energy of 137 meV was obtained. Furthermore, the ZnO-based n-i-p ultraviolet light-emitting diodes were deposited on sapphire substrates using the vapor cooling condensation system. A rectifying diode-like behavior and ultraviolet emission were observed from the ZnO-based n-i-p light-emitting diodes.

• 出版日期2011-3-15