High-temperature dielectric properties of Gd2O3-doped CeO2 ceramics

作者：Zhang, D.; Huang, S. G.; Guo, Y. M.; Wang, C. C.^*

来源：Materials Letters, 2016, 166: 192-195.

DOI：10.1016/j.matlet.2015.12.078

• Ceramics
• Dielectric properties
• Bulk
• Grain boundary
• Contact

Ceramic samples of Gd2O3-doped CeO2 (GDC) were fabricated by the co-precipitation method. The dielectric properties were investigated as functions of temperature (350-950 K) and frequency (100 Hz to 10 MHz). Three relaxations with the activation energies of 0.76, 0.88, and 1.03 eV in the order of ascending temperature were observed in GDC. The low-, middle-, and high-temperature relaxations are argued to be related to the bulk response caused by the Gd dopant-oxygen vacancy pairs, grain boundary, and contact effects, respectively.

• 出版日期2016-3-1
• 单位安徽大学