Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition

作者：Guo W; Allenic A; Chen Y B; Pan X Q^*; Che Y; Hu Z D; Liu B

来源：Applied Physics Letters, 2007, 90(24): 242108.

DOI：10.1063/1.2747669

Antimony-doped p-type ZnO films epitaxially grown on (0001) sapphire substrates were fabricated by pulsed laser deposition at 400-600 degrees C in 5.0x10(-2) Torr oxygen without postdeposition annealing. The films grown at 600 degrees C have among the highest reported hole concentration of 1.9x10(17) cm(-3) for antimony doping, Hall mobility of 7.7 cm(2)/V s, and resistivity of 4.2 Omega cm. Transmission electron microscopy reveals that the p-type conductivity closely correlates to the high density of defects which facilitate the formation of acceptor complexes and the compensation of native shallow donors. The thermal activation energy of the acceptor was found to be 115 +/- 5 meV and the corresponding optical ionization energy is similar to 158 +/- 7 meV.

• 出版日期2007-6-11