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摘要
An analytical model for surface potential of asymmetric double gate Bilayer Graphene (BLG) transistors is presented on the basis of two-dimensional Poisson's equation. To verify the accuracy of potential model, the modelling data are compared with the simulation data of FlexPDE program and a good agreement is observed. From surface potential expression, the device behaviour in velocity saturation region is investigated. As a result, lateral electric field and length of velocity saturation region (L-d) are formulated and their dependence on several device parameters is carefully examined.
- 出版日期2013
