摘要

In this letter, a new cascaded terminating-type and capacitive-type power sensor is proposed for -10- to 22-dBm application. The terminating-type power sensor is designed for the low-power detection, while the capacitive-type power sensor is for high-power detection. This device is based on microelectromechanical systems (MEMS) technology and fabricated by GaAs monolithic microwave integrated circuit process. The tested return loss is about -23 dB at 8 GHz, -21.5 dB at 10 GHz, and -20 dB at 12 GHz. For the incident power from 1 to 100 mW, the terminating-type sensor operates, and the measured sensitivity is close to 0.132 mV/mW at 8 GHz, 0.124 mV/mW at 10 GHz, and 0.125 mV/mW at 12 GHz, respectively. For the incident power from 100 to 150 mW, the capacitive-type sensor works, and the measured sensitivity is about 0.160 fF/mW at 8 GHz, 0.156 fF/mW at 10 GHz, and 0.145 fF/mW at 12 GHz, respectively.