摘要
We develop a miniaturized chamber installed on a tandetron accelerator into which negative ions of small carbon clusters are transported. Negative clusters C-1(-)-C-10(-) are obtained with beam currents of 1-10(4) nA at energies of 10-20 keV. C-2(-) beams of 0.2 mu A are used to directly deposit carbon films on SiO2/Si substrates. Formation of ultrathin carbon films are demonstrated by Raman scattering, which reveals the evolution of the graphitic peak (1550 cm(-2)) with deposition time.
- 出版日期2012-7
- 单位武汉大学