Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

作者：Tong Jin Hui; Zhao Bi Jun; Wang Xing Fu; Chen Xin; Ren Zhi Wei; Li Dan Wei; Zhuo Xiang Jing; Zhang Jun; Yi Han Xiang; Li Shu Ti^*

来源：Chinese Physics B, 2013, 22(6): 068505.

DOI：10.1088/1674-1056/22/6/068505

• GaN-based light-emitting diodes
• GaN/InGaN superlattice barriers
• electrostatic field

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.

• 出版日期2013-6
• 单位华南师范大学