摘要

In this work, multi memristors in series, parallel and series-parallel connection are considered as different subsystems. First, these subsystems are driven by a voltage source, respectively. The interdependence relation among voltage, current, charge, flux and the normalized width of the doped region are taken into consideration to a complete mathematical model for each memristor. Then, we use these connected subsystems of multi memristors to replace Chua's diode. The combinations of memristors in circuits can give rise to rich enough dynamical behavior that it wouldn't produce further complications of adding in other circuit elements. Multi memristors in series, parallel and series-parallel connection are given to illustrate an important step towards real world memristor system applications.

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