Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

作者：Wang Zhao; Li Bing^*; Zheng Xu; Xie Jing; Huang Zheng; Liu Cai; Feng Liang Huan; Zheng Jia Gui

来源：Chinese Physics B, 2010, 19(2): 027303.

DOI：10.1088/1674-1056/19/2/027303

• deep level transient spectroscopy
• CdS/CdTe solar cells
• Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E(v) + 0.128 eV, originates from the vacancy of Cd (V(Cd)).

• 出版日期2010-2
• 单位四川大学