X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses

作者：Wierzchowski W; Wieteska K; Balcer T; Klinger D; Sobierajski R; Zymierska D^*; Chalupsky J; Hajkova V; Burian T; Gleeson A J; Juha L; Tiedtke K; Toleikis S; Vysin L; Wabnitz H; Gaudin J

来源：Radiation Physics and Chemistry, 2011, 80(10): 1036-1040.

DOI：10.1016/j.radphyschem.2011.02.034

• Silicon
• FLASH irradiation
• X-ray topography
• Deformation fields

An important problem in the experiments performed with the intense fourth generation X-ray sources is the damages of the examined samples caused by the high energy impact. The effect introduced by the beam from the FLASH source in crystalline silicon samples was studied through synchrotron white beam projection and section topography, enabling the evaluation of the strain field associated with the damages. The topographs indicated the existence of deformed field of cylindrical symmetry providing the dark contrast. It was also shown that some of the Bragg-case section images of spots in silicon correspond well to the simulated images of rod-like inclusions.

• 出版日期2011-10
• 单位中国原子能科学研究院