Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles

作者：Polyakov A Y; Smirnov N B; Yakimov E B; Cho Han Su; Baek Jong Hyeob; Turutin A V; Shemerov I V; Kondratyev E S; Lee In Hwan

来源：ECS Journal of Solid State Science and Technology, 2016, 5(10): Q274-Q277.

DOI：10.1149/2.0051612jss

Deep traps spectra are compared for GaN/InGaN light emitting diodes with and without a template embedded with SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near E-c-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.

• 出版日期2016