摘要
The structural and electronic properties of FeSe ultrathin layers on Bi2Se3 have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multilayers, which are predominantly 3-5 monolayers (MLs) thick, exhibit a hole pocket-like electron band at (Gamma) over bar and a dumbbell-like feature at (M) over bar, similar to multilayers of FeSe on SrTiO3. Moreover, the topological state of the Bi2Se3 is preserved beneath the FeSe layer, as indicated by a heavily n-doped Dirac cone. Low temperature scanning tunneling spectroscopy does not exhibit a superconducting gap for any investigated thickness down to a temperature of 5 K.
- 出版日期2016-9-26
- 单位江苏大学