Dependence of Copper Concentration on the Properties of Cu2ZnSnS4 Thin Films Prepared by Electrochemical Method

作者：Mkawi E M^*; Ibrahim K; Ali M K M; Mohamed Abdussalam Salhin

来源：International Journal of Electrochemical Science, 2013, 8(1): 359-368.

DOI：10.1016/s1452-3981(23)14026-0

• Cu2ZnSnS4
• Thin film
• copper concentration
• Electrochemical

Cu2ZnSnS4 (CZTS) thin films were fabricated as solar cell absorber layers via sequential electrodeposition method using a flexible copper plate as substrate. The CZTS thin films were grown with different copper salt concentrations and sulfurized in elemental sulfur vapor. The morphological, structural, compositional, and electrical properties of the films were investigated using X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy, as well as by Raman scattering and Hall effect measurements. The results showed that the CZTS properties depend on the copper concentration in the precursor. The XRD patterns of the precursor showed the preferred orientation of the (112), (220), and (312) phases. The thin film showed a p-type conductivity, with a carrier concentration between 9.56 x 10(16) cm(-2) and 3.66 x 10(17) cm(-2), depending on the composition of the precursor mixture.

• 出版日期2013-1