MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

作者：Ramvall P^*; Wang C H; Astromskas G; Vellianitis G; Holland M; Droopad R; Samuelson L; Wernersson L E; Passlack M; Diaz C H

来源：Journal of Crystal Growth, 2013, 374: 43-48.

DOI：10.1016/j.jcrysgro.2013.03.044

• Crystal structure
• Metalorganic chemical vapor deposition
• Organometallic vapor phase epitaxy
• Nanomaterials
• Antimonides
• Heterojunction semiconductor devices

We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 %26apos;%26apos;. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.

• 出版日期2013-7-1