A 3.9ppm/degrees C 8.8nW and High PSRR Subthreshold CMOS Multiple Voltage Reference

作者：Jiang Mei^*; Li Yongquan; Yang Zhi

来源：Chinese Journal of Electronics, 2017, 26(1): 101-105.

DOI：10.1049/cje.2016.11.005

• Voltage reference
• Multiple output
• Subthreshold circuit
• Ultra-low power
• Differential threshold

A voltage reference with low Temperature coefficient (TC) and three outputs, which is compatible with high Power supply rejection ratio (PSRR) and low power consumption, is presented in this paper. The proposed reference circuit operating with all transistors biased in subthreshold region, provides three reference voltages of 340mV, 680mV, and 1020mV. Subthreshold MOSFET design allows the circuit to work with minimum current consumption of 7.4nA at the supply voltage 1.2V. The mean line sensitivity is 1.7%/V under a supply voltages ranging from 1.2 to 3V. The Power supply rejection ratio (PSRR) of 340mV output voltage simulated at 100Hz and 10MHz is over than 51.9dB and 120.4dB, respectively. Monte Carlo simulation shows a mean TC is 3.9ppm/degrees C with a standard deviation of 1ppm/degrees C over a set of 500 samples, in a temperature range from -30 degrees C to 100 degrees C. The active area of the presented voltage reference is 0.003mm(2).

• 出版日期2017-1
• 单位深圳大学