Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition

作者：Chao, Liang-Chiun^*; Shih, Yu-Ren; Li, Yao-Kai; Chen, Jun-Wei; Wu, Jiun-De; Ho, Ching-Hwa

来源：Applied Surface Science, 2010, 256(13): 4153-4156.

DOI：10.1016/j.apsusc.2010.02.001

• ZnO
• Nitrogen
• Raman scattering

Nitrogen-doped ZnO thin films have been prepared by reactive ion beam sputtering deposition utilizing a capillaritron ion source. X-ray diffraction (XRD) analysis of the as-deposited film exhibits a single strong ZnO (002) diffraction peak centred at 34.40 degrees. Post-growth annealing causes increase of grain size and decrease of c-axis lattice constant. Micro-Raman spectroscopy analysis of the as-deposited film shows strong nitrogen-related local vibration mode at 275, 582, 640 and 720 cm (1), whereas the E-2 mode of ZnO at 436 cm (1) can barely be identified. Annealing at 500-800 degrees C causes decrease of 275, 582, 640 and 720 cm (1) and increase of 436 cm (1) intensity, indicating out-diffusion of nitrogen and improvement of ZnO crystalline quality. Unlike un-doped ZnO, the surface roughness of nitrogen-doped ZnO deteriorates after annealing, which is also attributed to the out-diffusion of nitrogen. A nitrogen concentration of similar to 10(21)/cm(3) was observed while type conversion from n-type to p-type was not achieved, which is likely due to the formation of Zn-I-N-O or (N-2)(O) that act as donor/double donors.

• 出版日期2010-4-15