Achieving good bias stress reliability in organic transistor with vertical channel

作者：Lin Hung Cheng; Zan Hsiao Wen^*; Meng Hsin Fei

来源：Organic Electronics, 2014, 15(7): 1531-1535.

DOI：10.1016/j.orgel.2014.04.007

• Bias stress
• SAM
• Organic transistor
• OLED driving

Unlike organic field-effect transistor with accumulated channel at dielectric/semiconductor interface, vertical organic transistor exhibits bulk channel current and hence performs good bias stress reliability. Adding self-assemble-monolayer to treat vertical channel can further modulate the charge-trapping surrounding the base electrode and hence influence the bias stress reliability. During 4300-s positive/negative bias stresses, stable output current and on/off ratio are demonstrated by using octadecyltrichlorosilane (OTS)-passivated vertical channel. The good reliability together with the low operation voltage and the high output current make vertical organic transistors capable of driving organic light emitting diode.

• 出版日期2014-7