Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

作者：Khandelwal Sourabh^*; Chauhan Yogesh Singh; Fjeldly Tor A

来源：IEEE Transactions on Electron Devices, 2012, 59(10): 2856-2860.

DOI：10.1109/TED.2012.2209654

• AlGaN/GaN high electron mobility transistor (HEMT)
• compact model
• modulation-doped field-effect transistor (MODFET)

A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E-f from a consistent solution of Schrodinger%26apos;s and Poisson%26apos;s equations in the quantum well, considering the two important energy levels. The accuracy of our E-f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E-f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.

• 出版日期2012-10