A 0.6-V sub-mW X-band RFSOI CMOS LNA with novel complementary current-reused technique

作者：Dai, Ruofan^*

来源：International Journal of Circuit Theory and Applications, 2017, 45(12): 2046-2056.

DOI：10.1002/cta.2336

• low voltage
• LNA
• modified complementary current-reused
• diode connected MOSFET bias
• forward body-bias
• notch filter isolator

A fully integrated 0.6V low-noise amplifier (LNA) for X-band receiver application based on 0.18m RFSOI CMOS technology is presented in this paper. To achieve low noise and high gain with the constraint of low voltage and low power consumption, a novel modified complementary current-reused LNA using forward body bias technique is proposed. A diode connected MOSFET forward bias technique is employed to minimize the body leakage and improve the noise performance. A notch filter isolator is constructed to improve the linearity of low voltage. The measured results show that the proposed LNA achieves a power gain of 11.2dB and a noise figure of 3.8dB, while consuming a DC current of only 1.6mA at supply voltage of 0.6V.

• 出版日期2017-12
• 单位中国科学院上海微系统与信息技术研究所; 信息功能材料国家重点实验室