Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method

作者：Huang Li Hsien^*; Kan Kai Chuan; Lee Ching Ting

来源：Journal of Electronic Materials, 2009, 38(4): 529-532.

DOI：10.1007/s11664-008-0620-3

• Photoelectrochemical oxidation method
• secondary-ion mass spectrometry
• x-ray photoelectron spectroscopy
• x-ray diffraction

A bias-assisted photoelectrochemical oxidation method was used to oxidize p-GaN directly. Secondary-ion mass spectrometry and x-ray photoelectron spectroscopy were used to analyze the grown films, confirming that the p-GaN can be oxidized using the bias-assisted PEC oxidation method. In addition, x-ray diffraction was used to analyze the crystalline phase of the grown films annealed at different temperatures. After annealing the oxide films at 700A degrees C in O(2) ambient for 2 h, the oxidized p-GaN films were converted from amorphous to the beta-Ga(2)O(3) crystalline phase.