Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review

作者：Gorji Mohammad Saleh; Cheong Kuan Yew^*

来源：Critical Reviews in Solid State and Materials Sciences, 2015, 40(4): 197-222.

DOI：10.1080/10408436.2014.940444

• device
• metal-semiconductor interface
• Schottky barrier diode
• pinch-off effect
• inhomogeneity in SBH
• triple interface
• gate
• electric field enhancement

Schottky and Ohmic contacts are essential parts of electronic and optoelectronic devices based on semiconductor materials. Controlling the contact/semiconductor interface properties is the key to obtaining a contact with an optimum performance. Contacts incorporated by nanomaterials, i.e., nano-sized particles that are embedded at the interface of contact/semiconductor, can transform the conventional approaches of contact fabrication, resulting in more reproducible, tunable and efficient electronic, and optoelectronic devices. This article is a review of theoretical and fabrication progress on the last two decades to produce contacts with embedded nanoparticles (NPs). The review covers common routes of NPs deposition on different substrates (e.g., Si, Ge, SiC, GaN, GaAs67P33, and InP) for nanostructured contact fabrication and the theoretical models to investigate the NPs effects on the conduction mechanism and electrical properties of devices.

• 出版日期2015-7-4