摘要
Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature.
- 出版日期2009-12