A low-voltage ultra-wideband down-conversion mixer with improved power conversion gain

作者：Chen, Jun-Da^*

来源：International Journal of Electronics, 2011, 98(8): 1055-1073.

DOI：10.1080/00207217.2011.582447

• CMOS mixer
• double side band noise figure
• ultra-wideband
• Gilbert-cell mixers
• low power

This article presents a wideband mixer using a TSMC 0.18 mu m complementary metal-oxide semiconductor technology process for ultra-wideband (UWB) system applications. The measured 3-dB radio frequency (RF) bandwidth is from 3 to 8.4GHz with an intermediate frequency of 10 MHz. The measurement results of the proposed mixer achieve 8.1 dB average power conversion gain -5dBm input third-order intercept point (IIP3) at 7.4GHz and 12.4-13.3 dB double side band noise figure. The total dc power consumption of this mixer including output buffers is 3.18mW from a 1V supply voltage. The output current buffer consumption is about 2.26mW with an excellent local oscillator-RF isolation of up to 40 dB at 5 GHz. The article presents a mixer topology that is greatly suitable for low-power operation in UWB system applications.

• 出版日期2011