Preparation and characterization of Al2xIn2-2xO3 films deposited on MgO (100) by MOCVD

作者：Li, Zhao; Ma, Jin^*; Zhao, Cansong; Du, Xuejian; Mi, Wei; Luan, Caina; Feng, Xianjin

来源：Materials Research Bulletin, 2015, 67: 14-19.

DOI：10.1016/j.materresbull.2015.02.046

• Thin film
• Crystal growth
• Microstructure
• TEM

The ternary Al2xIn2-2xO3 films with different compositions x[Al/(Al + In) atomic ratio] have been fabricated on the MgO (1 0 0) substrates by the metal organic chemical vapor deposition (MOCVD) method. The influence of different Al contents on the structural, optical and electrical properties of Al2xIn2-2xO3 films has been studied. The structural studies reveal a change from single crystalline structure of cubic In2O3 to amorphous as the Al content increases. The average transmittances of all samples in the visible range are over 80%. The optical band gap is observed to increase monotonically from 3.67 to 5.38 eV as the Al content increases from 0.1 to 0.9.

• 出版日期2015-7
• 单位山东大学