A 4.7 mu A Quiescent Current, 450 mA CMOS Low-Dropout Regulator with Fast Transient Response

作者：Chong Sau Siong^*; Kwantono Hendra; Chan Pak Kwong

来源：IEICE - Transactions on Electronics, 2011, E94C(8): 1271-1281.

DOI：10.1587/transele.E94.C.1271

• power management IC
• composite transistor
• dynamic-biasing
• LDO regulator
• low quiescent LDO
• high drive LDO
• fast transient LDO

This paper presents a new low-dropout (LDO) regulator with low-quiescent, high-drive and fast-transient performance. This is based on a new composite power transistor composed of a shunt feedback class-AB embedded gain stage and the application of dynamic-biasing schemes to both the error amplifier as well as the composite power transistor. The proposed LDO regulator has been simulated and validated using BSIM3 models and GLOBALFOUNDRIES 0.18-mu m CMOS process. The simulation results have shown that the LDO regulator consumes 4.7 mu A quiescent current at no load, regulating the output at 1 V from a minimum 1.2 V supply. It is able to deliver up to 450 mA load current with a dropout of 200 mV. It can be stabilized using a 4.7 mu F output capacitor with a 0.1 Omega ESR resistor. The maximum transient output voltage is 64.6 mV on the basis of a load step change of 450 mA/10 ns under typical condition. The full load transient response is less than 350 us.

• 出版日期2011-8
• 单位南阳理工学院