A photon detector with very high gain at low bias and at room temperature

作者：Memis Omer Gokalp; Katsnelson Alex; Kong Soon Cheol; Mohseni Hooman^*; Yan Minjun; Zhang Shuang; Hossain Tim; Jin Niu; Adesida Ilesanmi

来源：Applied Physics Letters, 2007, 91(17): 171112.

DOI：10.1063/1.2802043

We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of similar to 1 V at 1.55 mu m at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA/cm(2). The noise equivalent power (NEP) is measured to be 4 fW/Hz(0.5) at room temperature without any gating, which is similar to NEP of current InGaAs/InP avalanche photodetectors in gated operation.

• 出版日期2007-10-22
• 单位西北大学