Nonvolatile Floating-Gate Memories Using Zr and ZrO2 Nanodots

作者：Hong Seung Hui; Kim Min Choul; Oh Hyoung Taek; Choi Suk Ho^*; Kim Kyung Joong

来源：Journal of Nanoscience and Nanotechnology, 2011, 11(1): 148-151.

DOI：10.1166/jnn.2011.3136

• Zr Nanodots
• Nonvolatile Memories
• Double Oxide Barrier

Triple-layer structures of SiO2/Zr nanodots (NDs)/SiO2 for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy demonstrate that Zr NDs self-assembled between the SiO2 layers by IBSD are changed into ZrO2 NDs by annealing. The memory window that is estimated by capacitance-voltage curves increases up to a maximum value of 5.8 V with increasing Zr amount up to 6 monolayers for the annealed samples. The memory window and the charge-loss rate at the programmed state are smaller before annealing, which is explained with reference to double oxide barriers of SiO2 and ZrO2.

• 出版日期2011-1