Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

作者：Shima Hisashi^*; Nakano Takashi; Akinaga Hiro

来源：Applied Physics Letters, 2010, 96(19): 192107.

DOI：10.1063/1.3373594

• annealing
• bonds (chemical)
• cobalt compounds
• electron energy loss spectra
• MIM devices
• platinum
• random-access storage
• thermal stability
• titanium
• transmission electron microscopy

The thermal stability of the resistance random access memory material in the reducing atmosphere at the elevated temperature was improved by the addition of Ti. The unipolar resistance switching before and after the postdeposition annealing (PDA) process at 400 degrees C was confirmed in Pt/CoO/Ti(5 nm)/Pt device, while the severe degradation of the initial resistance occurs in the Pt/CoO/Pt and Pt/CoO/Ti(50 nm)/Pt devices. By investigating the chemical bonding states of Co, O, and Ti using electron energy loss spectroscopy combined with transmission electron microscopy, it was revealed that excess Ti induces the formation of metallic Co, while the thermal stability was improved by trace Ti. Moreover, it was indicated that the filamentary conduction path can be thermally induced after PDA in the oxide layer by analyzing electrical properties of the degraded devices. The adjustment of the reducing elements is quite essential in order to participate in their profits.

• 出版日期2010-5-10