A Statistical Model Describing Temperature Dependent Gettering of Cu in p-Type Si

作者：Kamiyama Eiji^*; Sueoka Koji; Vanhellemont Jan

来源：ECS Journal of Solid State Science and Technology, 2015, 4(7): P232-P235.

DOI：10.1149/2.0131507jss

A model is proposed describing quantitatively the temperature dependent gettering of Cu atoms in p-type Si wafers by taking into account the densities and the binding energies of all types of occupying sites, including the gettering ones. Binding energy in this context is defined as the decrease of the formation energy from the reference energy of the Cu atom when it is located at the T-site through which Cu atoms wander through the silicon lattice. By using a statistical approach, the model allows to predict the thermal equilibrium concentration of Cu atoms in each part of a wafer structure. The calculated results show good agreement with reported experimental observations. This model can also be applied to calculate thermal equilibrium concentrations of any contaminant. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.

• 出版日期2015